Semiconductor device and a method of operating the semiconductor device

ABSTRACT

A vertical semiconductor device includes: a channel on a substrate, the channel extending in a first direction substantially perpendicular to an upper surface of the substrate; a first data storage structure contacting a first sidewall of the channel; a second data storage structure on a second sidewall of the channel; and gate patterns on a surface of the second data storage structure, wherein the gate patterns are spaced apart from each other in the first direction, and the gate patterns extend in a second direction substantially parallel to the upper surface of the substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. § 119 to Korean PatentApplication No. 10-2019-0069038, filed on Jun. 12, 2019, in the KoreanIntellectual Property Office (KIPO), the disclosure of which isincorporated by reference herein in its entirety.

1. TECHNICAL FIELD

Exemplary embodiments of the inventive concept relate to a semiconductordevice including memory cells storing data of multiple-bits and a methodof operating the semiconductor device.

2. DESCRIPTION OF THE RELATED ART

In an effort to increase a storage capacity of a semiconductor device, amulti level cell (MLC) for storing data of at least two bits in onememory cell has been developed. Examples of the MLC include a triplelevel cell that stores 3-bit data, a quad level cell that stores 4-bitdata, or a penta level cell that stores 5-bit data. Therefore, methodsof storing data of multiple-bits in the one memory cell and methods ofreading the stored data from the memory cell without errors are underdevelopment.

SUMMARY

According to an exemplary embodiment of the inventive concept, there isprovided a vertical semiconductor device including a channel on asubstrate, the channel extending in a first direction substantiallyperpendicular to an upper surface of the substrate; a first data storagestructure contacting a first sidewall of the channel; a second datastorage structure on a second sidewall of the channel; and gate patternson a surface of the second data storage structure, wherein the gatepatterns are spaced apart from each other in the first direction, andthe gate patterns extend in a second direction substantially parallel tothe upper surface of the substrate.

According to an exemplary embodiment of the inventive concept, there isprovided a vertical semiconductor device including gate patterns stackedon a substrate, wherein the gate patterns are spaced apart from eachother in a first direction substantially perpendicular to an uppersurface of the substrate, and the gate patterns extend in a seconddirection substantially parallel to the upper surface of the substrate;a channel passing through the gate patterns, wherein the channel iselectrically connected to the substrate, and the channel has acylindrical shape; a first data storage structure contacting a firstsidewall of the channel; and a second data storage structure on a secondsidewall of the channel opposite the first sidewall, wherein the seconddata storage structure contacts the channel.

According to an exemplary embodiment of the inventive concept, there isprovided a vertical semiconductor device including a channel on asubstrate; a first data storage structure formed on a first side of thechannel; a second data storage structure formed on a second sideopposite to the first side of the channel; and gate patterns on thesecond data storage structure.

According to an exemplary embodiment of the inventive concept, there isprovided a method of operating a semiconductor device. The method mayinclude storing first data in a first data storage structure of thesemiconductor device, the semiconductor device comprising memory cells,each of the memory cells including the first data storage structure anda second data storage structure; storing second data in the second datastorage structure; reading the first data; and reading the second data.

According to an exemplary embodiment of the inventive concept, avertical semiconductor device includes: a first gate pattern and asecond gate pattern arranged in a vertical direction on a substrate,wherein an insulation layer is disposed between the first gate patternand the second gate pattern; a channel layer disposed on the substrate;a first data storage element disposed on a first side of the channellayer; and a second data storage element disposed on a second side ofthe channel layer, wherein the second data storage element is disposedbetween the second side of the channel layer and the first gate pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a vertical semiconductordevice in accordance with an exemplary embodiment of the inventiveconcept;

FIGS. 2A, 2B and 2C are enlarged cross-sectional views of memory cellsof vertical semiconductor devices in accordance with exemplaryembodiments of the inventive concept;

FIG. 3 is a circuit diagram of memory cells of a vertical semiconductordevice in accordance with an exemplary embodiment of the inventiveconcept;

FIG. 4 shows a gate voltage-drain current in accordance with states in amemory cell according to an exemplary embodiment of the inventiveconcept;

FIGS. 5 and 6 are circuit diagrams illustrating a method of storing datain a memory cell of a vertical semiconductor device in accordance withan exemplary embodiment of the inventive concept, respectively;

FIGS. 7A, 7B, 8A, and 8B show the number of states for storing data ofmulti-bits in a memory cell, respectively;

FIGS. 9, 10, 11 and 12 are views for explaining a method of reading dataof a memory cell in a vertical semiconductor device according to anexemplary embodiment of the inventive concept;

FIGS. 13, 14, 15 and 16 are cross-sectional views illustrating stages ofa method of manufacturing a vertical semiconductor device in accordancewith an exemplary embodiment of the inventive concept;

FIG. 17 is a cross-sectional view illustrating a vertical semiconductordevice in accordance with an exemplary embodiment of the inventiveconcept;

FIG. 18 is an enlarged cross-sectional view of a memory cell of avertical semiconductor device in accordance with an exemplary embodimentof the inventive concept;

FIG. 19 is a circuit diagram of memory cells of a vertical semiconductordevice in accordance with an exemplary embodiment of the inventiveconcept;

FIGS. 20, 21 and 22 are cross-sectional views illustrating stages of amethod of manufacturing a vertical semiconductor device according to anexemplary embodiment of the inventive concept;

FIG. 23 is a cross-sectional view illustrating a vertical semiconductordevice in accordance with an exemplary embodiment of the inventiveconcept;

FIG. 24 is an enlarged cross-sectional view of a memory cell of avertical semiconductor device in accordance with an exemplary embodimentof the inventive concept;

FIG. 25 is a cross-sectional view illustrating a vertical semiconductordevice in accordance with an exemplary embodiment of the inventiveconcept;

FIG. 26 is an enlarged cross-sectional view of a memory cell of avertical semiconductor device in accordance with an exemplary embodimentof the inventive concept;

FIG. 27 is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept;

FIG. 28 is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept;

FIG. 29 is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept; and

FIG. 30 is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Exemplary embodiments of the inventive concept will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings.

Hereinafter, a direction substantially perpendicular to an upper surfaceof a substrate may be a first direction. A direction substantiallyparallel to the upper surface of the substrate may be a seconddirection, and a direction substantially perpendicular to the seconddirection and substantially parallel to the upper surface of thesubstrate may be a third direction.

FIG. 1 is a cross-sectional view illustrating a vertical semiconductordevice in accordance with an exemplary embodiment of the inventiveconcept. FIGS. 2A, 2B and 2C are enlarged cross-sectional views ofmemory cells of vertical semiconductor devices in accordance withexemplary embodiments of the inventive concept. FIG. 3 is a circuitdiagram of memory cells of a vertical semiconductor device in accordancewith an exemplary embodiment of the inventive concept.

Referring to FIGS. 1, 2A, and 3, the vertical semiconductor device mayinclude a stacked structure 142 formed on a substrate 100 and verticalstructures 126 including a channel and passing through the stackedstructure 142. Further, a bit line structure 156 may be formed on thestacked structure 142. The bit line structure 156 may be electricallyconnected to a channel 118 of the vertical structures 126.

The substrate 100 may include a semiconductor material, e.g., silicon,germanium, silicon-germanium, or III-V semiconductor compounds, e.g.,GaP, GaAs, GaSb, etc. In exemplary embodiments of the inventive concept,the substrate 100 may be a silicon-on-insulator (SOI) substrate or agermanium-on-insulator (GOI) substrate.

The stacked structure 142 may include insulation layers 102 and gatepatterns 140 alternately and repeatedly stacked. Thus, the gate patterns140 may be spaced apart from each other in the first direction.

The gate patterns 140 may serve as gates of cell transistors. Inexemplary embodiments of the inventive concept, at least one gatepattern formed at a lowermost layer may serve as a gate of a groundselection transistor, and at least one gate pattern formed at anuppermost layer may serve as a gate of a string selection transistor.

An upper insulation layer 150 may be formed on the stacked structure142. The stacked structure 142 may extend in the second direction. Aplurality of stacked structures 142 may be arranged in the thirddirection, and a first trench 130 extending in the second direction maybe formed between the stacked structures 142.

In exemplary embodiments of the inventive concept, an insulation pattern144 may fill the first trench 130.

In exemplary embodiments of the inventive concept, a common source lineextending in the second direction may be formed in the first trench 130,and the common source line may be insulated from a sidewall of thestacked structure 142.

In exemplary embodiments of the inventive concept, the gate pattern 140may include a barrier layer and a gate conductive layer. The gateconductive layer may include a metal having an excellent gap fillingproperty and low resistance. The gate conductive layer may include,e.g., tungsten, titanium, tantalum, platinum, or the like. The barrierlayer may include, e.g., a metal nitride such as tungsten nitride,titanium nitride, tantalum nitride, or the like.

The vertical structure 126 may pass through the stacked structure 142,and may have a pillar shape. The vertical structure 126 may be formed inthe channel hole 106 passing through the stacked structure 142 andextending to an upper surface of the substrate 100.

In exemplary embodiments of the inventive concept, a semiconductorpattern 108 may be formed on a lower surface of the channel hole 106,and the semiconductor pattern 108 may contact the upper surface of thesubstrate 100.

In exemplary embodiments of the inventive concept, the semiconductorpattern 108 may not be formed. In this case, a channel connectionpattern may be formed on the substrate 100 to be electrically connectedto the channels 118 and the substrate 100. The channel connectionpattern may surround a lower portion of each of channels 118 in thevertical structures 126.

The vertical structure 126 may include a second data storage structure116, a channel 118, a first data storage structure 120, a fillinginsulation pattern 122 and an upper conductive pattern 124. The seconddata storage structure 116, the channel 118, the first data storagestructure 120 and the filling insulation pattern 122 may be sequentiallystacked on a sidewall of the channel hole 106. The upper conductivepattern 124 may be formed at an upper portion of on the channel hole 106to be electrically connected to the channel 118.

The second data storage structure 116 may include a blocking layer 110,a charge storage layer 112 and a tunnel insulation layer 114sequentially stacked on the sidewall of the channel hole 106. Theblocking layer 110 may contact the gate pattern 140.

In exemplary embodiments of the inventive concept, the tunnel insulationlayer 114 and the blocking layer 110 may include silicon oxide.

In exemplary embodiments of the inventive concept, the charge storagelayer 112 may include a charge trap layer or a charge floating layer.

For example, when data is stored in the charge storage layer 112 bytrapped charges in the charge storage layer 112, the charge storagelayer 112 may include silicon nitride, metal oxide, and the like. Themetal oxide may include, e.g., aluminum oxide. For example, when data isstored in the charge storage layer 112 by floating charges in the chargestorage layer 112, the charge storage layer 112 may include silicon. Thecharge storage layer 112 may include, e.g., doped silicon, undopedsilicon, and the like.

The channel 118 may contact the tunnel insulation layer 114, and may beelectrically connected to the substrate 100. In exemplary embodiments ofthe inventive concept, the channel 118 may have a cylindrical shapewithin the channel hole 106. In addition, a lower surface of the channel118 may contact an upper surface of the semiconductor pattern 108. Inexemplary embodiments of the inventive concept, the channel 118 mayinclude polysilicon.

The first data storage structure 120 may be formed on an inner sidewallof the channel 118. In exemplary embodiments of the inventive concept,the first data storage structure 120 may cover the inner sidewall of thechannel 118. The first data storage structure 120 may extend in thefirst direction. For example, the first data storage structure 120 mayhave a cylindrical shape.

The first data storage structure 120 may include a variable resistancematerial. In other words, data may be written in the first data storagestructure 120 by changing a resistance of the first data storagestructure 120.

In exemplary embodiments of the inventive concept, the first datastorage structure 120 may include resistive switching materials. Forexample, the first data storage structure 120 may include perovskitematerials, such as STO (SrTiO3), BTO (BaTiO3), PCMO (Pr1-XCaXMnO3), ormetal oxides such as zirconium oxide, hafnium oxide, hafnium aluminumoxide, hafnium silicon oxide, aluminum oxide, titanium oxide, tantalumoxide, or the like.

In exemplary embodiments of the inventive concept, the first datastorage structure 120 may include a phase change material whose phasemay be changed to an amorphous state or a crystalline state by Jouleheat. In this case, the resistance of the first data storage structure120 may be changed by the phase transition. The phase change materialmay include, e.g., GST materials in which germanium (Ge), antimony (Sb),and/or tellurium (Te) may be combined at a predetermined ratio. Inexemplary embodiments of the inventive concept, the first data storagestructure 120 may have a superlattice structure having a repetitivestacked structure of GeTe—SbTe. In exemplary embodiments of theinventive concept, the first data storage structure 120 may include anIn—Sb—Te (IST) material or a Bi—Sb—Te (BST) material.

In exemplary embodiments of the inventive concept, the first datastorage structure 120 may include a GeSe material.

In exemplary embodiments of the inventive concept, the first datastorage structure 120 may include a chalcogenide-based Ovonic thresholdswitching (OTS) material.

The filling insulation pattern 122 may be formed on the first datastorage structure 120 to fill most of the remaining portions of thechannel holes 106. The remaining portions of the channel holes 106 maycorrespond to portions of the channel holes 106 that have not alreadybeen filled with something. The filling insulation pattern 122 mayinclude, e.g., silicon oxide. The filling insulation pattern 122 mayhave a pillar shape.

The first data storage structure 120, the channel 118, the second datastorage structure 116, and the gate patterns 140 may be sequentiallyformed to surround a sidewall of the filling insulation pattern 122.

As shown in FIG. 2A, the second data storage structure 116, the channel118, the first data storage structure 120, and the filling insulationpattern 122 sequentially stacked on the sidewall of one of the gatepattern 140 may serve as one memory cell. Thus, the memory cells may bestacked in the first direction.

A stack of layers formed on the sidewall of each of the gate patterns140 may be variously modified.

In exemplary embodiments of the inventive concept, as shown in FIG. 2B,the first data storage structure 120 may have a structure in which twoor more layers 121 a and 121 b may be stacked. For example, the firstdata storage structure 120 may include a layer 121 a having a lowdensity of oxygen vacancy at a portion contacting the channel 118 and alayer 121 b having a high density of oxygen vacancy at a portion closerto the filling insulation pattern 122. The layer 121 a may directlycontact the channel 118 and the layer 121 b may directly contact thefilling insulation pattern 122.

In exemplary embodiments of the inventive concept, as shown in FIG. 2C,an interface oxide layer 119 a and an amorphous oxide layer 119 b may beformed between the channel 118 and the first data storage structure 120.Alternatively, the interface oxide layer 119 a may not be formed.Additional filament paths may be generated along a grain boundary of theinterface oxide layer 119 a, so that a distribution in the first datastorage structure 120 may be improved.

As described above, the one memory cell may include the first datastorage structure 120 and the second data storage structure 116,respectively. Therefore, the one memory cell may include two datastorage units in which data are stored in different mechanisms. Forexample, the one memory cell may include a first data storage unit byvirtue of the first data storage structure and a second data storageunit by virtue of the second data storage structure.

A plurality of gate patterns 140 may be formed on the sidewall of thevertical structures 126 to be spaced apart from each other in the firstdirection. The plurality of gate patterns 140 and one of the verticalstructures 126 may constitute one cell string.

Each of the memory cells included in the cell string may have a circuitconfiguration as shown in FIG. 3.

As shown in FIG. 3, in each of the cell strings, the channel 118 mayextend in the first direction. The memory cells may be divided by thegate patterns 140 formed on the channel 118. The top of the cell stringmay be connected to a bit line B/L and the bottom of the cell string maybe connected to a common source line CSL. In addition a transistoradjacent to the bit line B/L may be connected to a string selection lineat its gate, and a transistor adjacent to the common source line CSL maybe connected to a ground select line at its gate.

Cell transistors 2 including the second data storage structure 116 andthe gate pattern 140 stacked may be disposed on an outer wall of thechannel 118, respectively. The cell transistor 2 may serve as the seconddata storage unit.

Charges may be stored in the charge storage layer 112 by electric fieldsin a direction perpendicular to the outer sidewall of the channel 118contacting the second data storage structure 116, and thus, data may bewritten in the second data storage structure 116.

For example, the charges may be injected into the charge storage layer112 from the channel 118 by F—N tunneling, or the charges stored in thecharge storage layer 112 may be erased by F—N tunneling. The charges maybe stored in the charge storage layer 112 by trapping or floating.Therefore, a threshold voltage of the cell transistor 2 may be changedby the charges stored in the charge storage layer 112. Data may bedistinguished by the threshold voltage of the cell transistor 2.

In exemplary embodiments of the inventive concept, the cell transistor 2may have one of a plurality of threshold voltages in accordance with thecharges stored in the charge storage layer 112. Therefore, data of onebit or multi-bits may be stored in the cell transistor 2 included in onememory cell. In other words, the threshold voltages of the second datastorage structure 116 may be divided into a plurality of levels, so thatdata of at least two bits may be stored in the second data storagestructure 116.

The first data storage structure 120 may be formed on the inner sidewallof the channel 118. The first data storage structure 120 may serve asthe first data storage unit 1.

The resistance of the first data storage structure 120 may be changed byelectric fields in a direction parallel to the inner sidewall of thechannel 118. Data may be distinguished by a level of the resistance ofthe first data storage structure 120.

In exemplary embodiments of the inventive concept, the first datastorage structure 120 may have one of a plurality of levels of theresistances. Therefore, data of one bit or multi-bits data may be storedin the first data storage structure 120 included in the one memory cell.In other words, the resistances of the first data storage structure 120may be divided into the plurality of levels, so that data of at leasttwo bits may be stored in the first data storage structure 120.

FIG. 4 shows an example of a gate voltage-drain current in accordancewith states in the memory cell described above.

Referring to FIG. 4, when the gate voltage Vg of the memory cell islower than the lowest turn-on voltage of the cell transistor 2, the celltransistor may be turned off, and thus, levels of the resistances of thefirst data storage structure 120 may be distinguished. In the memorycell, the resistances of the first data storage structure 120 may bedivided into a plurality of resistance levels.

The levels of the resistance of the first data storage structure 120 maybe distinguished by a drain current. For example, as shown in FIG. 4,the drain current Id may have any one of four states. Therefore, thelevels of the resistance of the first data storage structure 120 may bedivided into four states.

When the gate voltage Vg is higher than the lowest turn-on voltage ofthe cell transistor 2 in the memory cell, the cell transistor 2 may beturned off or turned on depending on a charge storage state of the celltransistor 2. In other words, the threshold voltage of the celltransistor 2 in the memory cell may be divided into a plurality ofthreshold voltage levels.

The threshold voltage of the cell transistor 2 may be distinguished by avoltage having a specific drain current value Iverify. For example, asshown in FIG. 4, the threshold voltage may have any one of four levels.Therefore, the levels of the threshold voltage of the second datastorage structure 116 may be divided into four levels.

As described above, the one memory cell may include two data storageunits in which data are stored by different mechanisms. Thus, more datamay be stored in the one memory cell. In addition, the number of datastates required for the number of stored data in the one memory cell maybe reduced.

Write of Data

Hereinafter, a method of storing (or writing) data in the memory cell ofthe vertical semiconductor device in accordance with exemplaryembodiments of the inventive concept may be described.

FIGS. 5 and 6 are circuit diagrams illustrating a method of storing datain the memory cell of the vertical semiconductor device in accordancewith exemplary embodiments of the inventive concept.

Referring to FIG. 5, a method of storing data in the first data storagestructure 120 of a selected memory cell SC may be described. Theconditions in FIG. 5 are as follows:

Selected gate pattern: apply turn-off voltage (Voff)

Unselected gate pattern: apply pass voltage (Vpass)

Bit line of the selected memory cell SC: apply write pulse (Vwrite1) forthe first data storage structure 120.

When the pass voltage Vpass is applied to unselected gate patterns toturn on of all of unselected gate patterns, currents may flow throughthe channel of the unselected cell transistors. At this time, currentsmay barely flow through the first data storage structures 120 of theun-selected memory cells.

The pass voltage Vpass may be a voltage higher than a threshold voltage(e.g., a maximum threshold voltage) in the cell transistor of a dataprogrammed state.

Further, when the turn-off voltage Voff is applied to the selected gatepattern, the currents may not flow through the selected cell transistor.The turn-off voltage Voff may be a voltage lower than a thresholdvoltage (e.g., a minimum threshold voltage) in the cell transistor of adata erase state.

Thus, the write pulse may only be applied to the first data storagestructure 120 of the selected memory cell SC through the bit line. Thus,data may be written in the first data storage structure 120 of theselected memory cell SC.

In exemplary embodiments of the inventive concept, the resistance of thefirst data storage structure 120 may have one of at least two states ortwo levels in accordance with the write pulse.

For example, the resistance of the first data storage structure 120 mayhave one of two states (e.g., a resistance state 0 or a resistance state1). Thus, data of one bit may be stored in the first data storagestructure 120 of the one memory cell.

In the alternative, the resistance of the first data storage structure120 may have one of four states. In this case, the resistance of thefirst data storage structure 120 may include one of a resistance state 1(0, 0), a resistance state 2 (0,1), a resistance state 3 (1,0) and aresistance state 4 (1, 1). Thus, data of two bits may be stored in thefirst data storage structure 120 of the one memory cell.

As described above, the resistance of the first data storage structure120 may have the plurality of states, and data of multi-bits may bestored in the first data storage structure 120.

Referring to FIG. 6, a method of programming (or writing) data in asecond data storage structure 116 of a selected memory cell SC may bedescribed.

The programming conditions in FIG. 6 are as follows:

Selected gate pattern: apply programming voltage (Vpgm),

Unselected gate pattern: apply pass voltage (Vpass)

Bit line of selected memory cell SC: apply 0V (GND)

When the programming voltage Vpgm is applied to the selected gatepattern, charges may be injected from the channel into the chargestorage layer of the second data storage structure 116. Thus, athreshold voltage of the selected cell transistor may be changed, sothat data may be written in the second data storage structure 116 of theselected memory cell SC.

A method of erasing data in a second data storage structure 116 of amemory cell may also be described.

Data erase conditions are as follows:

Selected gate pattern: apply 0V (GND),

Unselected gate pattern: apply 0V (GND)

Bit line of selected memory cell: floating

Substrate (channel): apply erase voltage (Vers)

When the erase voltage Vers is applied to the channel, charges in thecharge storage layer may be discharged to the channel, and thus, datamay be erased. Therefore, a threshold voltage of a selected celltransistor may be lowered.

In exemplary embodiments of the inventive concept, the threshold voltageof the selected cell transistor may have one of at least two states ortwo levels by programming or erasing operations.

For example, the threshold voltage of the selected cell transistor mayhave one of two states (e.g., a threshold voltage state 0 or a thresholdvoltage state 1). Thus, data of one bit may be stored in the second datastorage structure 116 of the one memory cell.

For example, the threshold voltage of the selected cell transistor mayhave one of four states. In this case, the threshold voltage of theselected cell transistor may include one of a threshold voltage state 1(0,0), a threshold voltage state 2 (0,1), a threshold voltage state 3(1,0) and a threshold voltage state of 4 (1,1). Thus, data of two bitsmay be stored in the second data storage structure 116 of one memorycell.

Therefore, data of multi-bits may be stored in the second data storagestructure 116.

As described above, the memory cell may store data in each of two datastorage structures. In other words, the memory cell may have two dataparameters for storing data. Thus, the number of states required forstoring data of multi-bits in the one memory cell may be reduced.

FIGS. 7A, 7B, 8A, and 8B show the number of states for storing data ofmulti-bits in a memory cell, respectively.

FIGS. 7A and 8A show the number of states for storing data of two bitsand data of four bits, respectively, in the one memory cell having twodata parameters in accordance with exemplary embodiments of theinventive concept. To compare with this, FIGS. 7B and 8B show the numberof states for storing data of two bits and four bits, respectively, inone memory cell having one data parameter.

Referring to FIG. 7A, when data of one bit is stored in each of thefirst and second data storage structures 120 and 116, data of two bitsmay be stored in the one memory cell. In other words, the one memorycell may store one of two resistance states (I) in the first datastorage structure 120 and one of two threshold voltage states (Vth) inthe second data storage structure 116. In other words, the one memorycell may be divided into four states by combinations of the states ofthe first and second data storage structures 120 and 116, so that dataof two bits may be stored in the one memory cell.

On the other hand, referring to FIG. 7B, when only one data storagestructure is included in one memory cell, the data storage structure ofthe one memory cell may include four states to store data of two bits inthe one memory cell.

Referring to FIG. 8A, when data of two bits are stored in each of thefirst and second data storage structures 120 and 116, data of four bitsmay be stored in the one memory cell. In other words, the one memorycell may store one of four resistance states (I) in the first datastorage structure 120 and one of four threshold voltage states (Vth) inthe second data storage structure 116. In other words, the data storagestructure of the memory cell may include eight states. Therefore, thedata may be stored in each of the first and second data storagestructures 120 and 116, so that the one memory cell may be divided intosixteen states by combinations of the states of the first and seconddata storage structures 120 and 116. Thus, data of four bits may bestored in the one memory cell.

On the other hand, referring to FIG. 8B, when only one data storagestructure is included in one memory cell, the data storage structure ofthe one memory cell may include sixteen states to store data of fourbits data in the one memory cell.

In other words, when the one memory cell includes only one data storagestructure, the one memory cell may require 2^(n) states to store data ofn-bits in the one memory cell.

On the other hand, when one memory cell includes two data storagestructure, the one memory cell may required 2^(a)+2^(b) (a+b=n) statesto store data of n-bits in the one memory cell.

As described above, the data may be stored in each of the two datastorage structures, and data may be combined with each other. Thus, thenumber of states required for a memory cell having multi-bits may bereduced. Therefore, the data stored in the one memory cell may be easilydistinguished.

On the other hand, in a general case of one memory cell including onlyone data storage structure, as the number of data bits stored in onememory cell increases, the number of states to be distinguished in thedata storage structure may significantly increase. Therefore, each ofthe states may not be separately stored and read in the one memory cell.

However, in exemplary embodiments of the inventive concept, as thenumber of data of bits stored in the one memory cell is increased, thenumber of required states in the one memory cell may be significantlyreduced, compared with the case of the memory cell including the onedata storage structure. For example, when data of six bits are stored inthe one memory cell, sixteen states may be required in the one memorycell in accordance with exemplary embodiments of the inventive concept.However, in the case of the memory cell including the one data storagestructure, 64 states may be required for storing data of six bits in thememory cell. Thus, each of the states may be easily stored and read inthe memory cell in accordance with exemplary embodiments of theinventive concept.

Read of Data

Hereinafter, a method of reading data of the memory cell in the verticalsemiconductor device in accordance with exemplary embodiments of theinventive concept may be described.

FIGS. 9 to 12 are views for explaining a method of reading data of thememory cell in the vertical semiconductor device.

Referring to FIG. 9, a method of reading data of the first data storage120 structure of a selected memory cell SC may be described. Theconditions of FIG. 9 are as follows:

Selected gate pattern: apply turn-off voltage (Voff)

Unselected gate pattern: apply pass voltage (Vpass)

Bit line of selected memory cell SC: apply first read voltage (Vread1)

When a pass voltage Vpass is applied to turn on of all the unselectedgate patterns, currents can flow through the channel of the unselectedcell transistors. At this time, the currents may barely flow through thefirst data storage structure 120 of the unselected memory cell.

Further, when the turn-off voltage Voff is applied to the selected gatepattern, the currents may not flow through the selected cell transistor.Thus, the currents may flow through the first data storage structure 120depending on the resistance of the first data storage structure 120 ofthe selected memory cell SC.

Therefore, a current level may be changed as the resistance of the firstdata storage structure 120 changes. Thus, data stored in the first datastorage structure 120 of the selected memory cell SC may be read bycomparing the current level and a verifying current level.

In exemplary embodiments of the inventive concept, when data of one bitis stored in the first data storage structure 120, two resistance states(e.g., resistance state 0 or resistance state 1) of the first datastorage structure 120 may be distinguished by one verifying currentlevel. The one verifying current level may be referred to as a firstverifying current level.

FIG. 10 shows a distribution of current levels when data of two bits arestored in the first data storage structure 120.

Referring to FIG. 10, when data of two bits are stored in the first datastorage structure 120, one of four read current states may existdepending on the resistance of the first data storage structure 120.Thus, four resistance states of the first data storage structure 120,for example, the resistance state 1 (0,0), the resistance state 2 (0,1),the resistance state 3 (1,0), and the resistance state 4 (1,1), may bedistinguished by three verifying current levels, in other words, Iref1,Iref2 and Iref3.

Referring to FIG. 11, a method of reading data of a second data storagestructure 116 of a selected memory cell SC may be described. Theconditions of FIG. 11 are as follows:

Selected gate pattern: apply read verifying voltage (Vverify)

Unselected gate pattern: apply pass voltage (Vpass)

Bit line of the selected memory cell SC: apply second read voltage(Vread2)

When a pass voltage Vpass is applied to turn on of all the unselectedgate patterns, currents may flow through the channel of the unselectedcell transistors. At this time, the currents may barely flow through thefirst data storage structures 120 of the unselected memory cells.

Further, when the read verifying voltage Vverify is applied to theselected gate pattern, the selected cell transistor may be turned on orturned off according to the data written in the selected celltransistor. Therefore, the currents may flow or not flow through theselected cell transistor according to a threshold voltage of theselected cell transistor.

Therefore, when the read verifying voltage Vverify is applied to theselected gate pattern, a current level flowing through the selected celltransistor may be changed by the turn-on or turn-off of the selectedtransistor according to the data written in the second data storagestructure 116. The threshold voltage of selected cell transistor may bedistinguished by the current level. Thus, the data stored in the seconddata storage structure 116 may be read.

At this time, even if the selected transistor is turned off, thecurrents may slightly flow through the first data storage structure 120depending on the resistance of the first data storage structure 120 ofthe selected memory cell SC. Therefore, a verifying current value (e.g.,Iverify in FIG. 4) for determining the state of the selected celltransistor may be set to a higher current value than the current flowingthrough the first data storage structure 120 having a low resistancestate in the selected memory cell SC.

In exemplary embodiments of the inventive concept, when data of one bitis stored in the second data storage structure 116, two thresholdvoltage states (e.g., threshold voltage state 0 or threshold voltagestate 1) of the second data storage structure 116 may be distinguishedby applying one read verifying voltage.

FIG. 12 shows a distribution of threshold voltages when data of two bitsare stored in the second data storage structure 116.

Referring to FIG. 12, when data of two bits are stored in the seconddata storage structure 116, the second data storage structure 116 mayhave one of four threshold voltage states. In other words, the fourthreshold voltage states of the second data storage structure 116, forexample, the threshold voltage state 1 (0,0), the threshold voltagestate 2 (0,1), the threshold voltage state 3 (1,0), and the thresholdvoltage state 4 (1,1) may be distinguished by applying three readverifying voltages, e.g., Vverify1, Vverify2, and Vverify3.

As described above, one memory cell may include two data storage unitsin which data are stored by different mechanisms. The data stored ineach of the data storage units may be separately read. In addition, thenumber of data states required for the number of data stored in the onememory cell may be reduced; therefore, the data may be correctly andeasily read.

Data Write and Read Sequence

An example of a sequence for writing data of the memory cells may bedescribed hereinafter. However, the sequence for writing data of thememory cells may not be limited thereto.

In exemplary embodiments of the inventive concept, first, data may bewritten in the second data storage structures 116 including a chargestorage layer 112. Thereafter, data may be written in the first datastorage structures 120 including the variable resistance material.

In exemplary embodiments of the inventive concept, first, data may bewritten in the first data storage structures 120 including the variableresistance material. Thereafter, data may be written in the second datastorage structures 116 including the charge storage layer 112.

In exemplary embodiments of the inventive concept, data may be storedsequentially in the first and second data storage structures 120 and 116of a selected memory cell SC, respectively. For example, data may bewritten in the first data storage structure 120 including the variableresistance material of the selected memory cell SC, and then, data maybe written to the second data storage structure 116 including the chargestorage layer 112 of the selected memory cell SC. For example, data maybe written in the second data storage structure 116 of the selectedmemory cell SC, and then, data may be written to the first data storagestructure 120 of the selected memory cell SC.

An example of a sequence for reading data stored in the memory cells maybe described hereinafter. However, the sequence of the reading datastored in the memory cell may not be limited thereto.

In exemplary embodiments of the inventive concept, first, the data ofthe second data storage structures 116 may be read. Thereafter, data ofthe first data storage structures 120 including the variable resistancematerial may be read.

In exemplary embodiments of the inventive concept, first, the data ofthe first data storage structures 120 may be read. Thereafter, the dataof the second data storage structures 116 may be read.

In exemplary embodiments of the inventive concept, first, data of thefirst data storage structure 120 of a selected memory cell SC may beread. Thereafter, data of the second data storage structure 116 of theselected memory cell SC may be read. In this case, a verifying currentvalue (e.g., Iverify in FIG. 4) for determining the state of the seconddata storage structure 116 may be set to a higher current value than thecurrent flowing through the first data storage structure 120 having alow resistance state in the selected memory cell SC.

However, the currents flowing through the first data storage structure120 may be abnormally high, and in this case, the currents may be higherthan the verifying current Iverify (20, refer to FIG. 4). If the currentvalue flowing through the first data storage structure 120 is higherthan the verifying current Iverify, the verifying current Iverify may beincreased. In other words, the verifying current Iverify may be reset toa value obtained by adding the current flowing through the first datastorage structure 120 and a fixed offset current (Ioffset in FIG. 4).Therefore, the reset verifying current (Iverify1) may be higher than theoriginal verifying current Iverify.

FIGS. 13 to 16 are cross-sectional views illustrating stages of a methodof manufacturing a vertical semiconductor device in accordance withexemplary embodiments of the inventive concept.

Referring to FIG. 13, insulation layers 102 and first sacrificial layers104 may be alternately and repeatedly stacked on a substrate 100 to forma first mold layer. An upper surface of the first mold layer may exposethe insulation layer 102.

In exemplary embodiments of the inventive concept, the insulation layers102 may include an oxide such as silicon oxide. The first sacrificiallayers 104 may include a nitride, such as silicon nitride.

A plurality of channel holes 106 may be formed through the first moldlayer to expose a surface of the substrate 100.

In exemplary embodiments of the inventive concept, a semiconductorpattern 108 may be further formed on a bottom surface of the channelholes 106, and the semiconductor pattern 108 may contact the substrate100.

The blocking layer 110, the charge storage layer 112, and the tunnelinsulation layer 114 may be sequentially formed on the upper surface ofthe first mold layer, a sidewall of the channel hole 106, and an uppersurface of the semiconductor pattern 108. The blocking layer 110, thecharge storage layer 112, and the tunnel insulation layer 114 formed onthe upper surfaces of the first mold layer and the semiconductor pattern108 may be removed by anisotropic etching process. Therefore, theblocking layer 110, the charge storage layer 112, and the tunnelinsulation layer 114 may be sequentially stacked on the sidewall of thechannel hole 106. The blocking layer 110, the charge storage layer 112and the tunnel insulation layer 114 may serve as a second data storagestructure 116.

Referring to FIG. 14, a channel layer may be formed conformally on thetunnel insulation layer 114, the semiconductor pattern 108, and thefirst mold layer. A variable resistance layer is formed on the channellayer. Thereafter, a filling insulation layer is formed on the variableresistance layer to fill the channel hole 106.

The filling insulation layer, the variable resistance layer, and thechannel layer may be planarized until the upper surface of the firstmold layer is exposed. Upper portions of the variable resistance layerand the filling insulation layer may be partially removed to form anupper recess exposing an upper sidewall of the channel layer. An upperconductive pattern 124 may be formed to fill the upper recess.

Thus, a vertical structure 126 including a second data storage structure116, a channel 118, a first data storage structure 120, a fillinginsulation pattern 122 and the upper conductive pattern 124 may beformed to fill the channel hole 106.

The channel 118 may be formed on the tunnel insulation layer 114 and thesemiconductor pattern 108, and may have a cylindrical shape. The channel118 may be electrically connected to the substrate 100. The channel 118may be disposed between the first data storage structure 120 and thesecond data storage structure 116. The channel 118 may include, e.g.,polysilicon.

The variable resistance layer formed on the channel 118 may include,e.g., a cylindrical shape. The variable resistive layer may serve as thefirst data storage structure 120.

The filling insulation pattern 122 may be formed on the variableresistance layer, and may fill most of the channel holes 106. The upperconductive pattern 124 may contact an upper portion of the channel 118.The upper conductive pattern 124 may include, e.g., polysilicon.

Referring to FIG. 15, a first trench 130 may be formed through the firstmold layer by an anisotropic etching process. An upper surface of thesubstrate 100 may be exposed by the first trench 130. The first trench130 may extend in the second direction. A mold structure extending inthe second direction may be formed by forming the first trench 130.

The first sacrificial layers 104 exposed by a sidewall of the firsttrench 130 may be removed to form first gaps 132 between the insulationlayers 102. A portion of the outer wall of the vertical structures 126may be exposed by the first gap 132. In other words, a portion of theblocking layer 110 and a sidewall of the semiconductor pattern 108 maybe exposed by the first gap 132.

Referring to FIG. 16, a gate electrode layer may be formed to fill atleast the first gap 132, and the gate electrode layer formed in thefirst trench 130 may be removed to form a gate pattern 140 in the firstgap 132.

In exemplary embodiments of the inventive concept, before forming thegate electrode layer, a second blocking layer may be formed on a surfaceof the first gap 132.

In exemplary embodiments of the inventive concept, the gate pattern 140may include a barrier layer and a gate conductive layer sequentiallystacked. The gate conductive layer may include a metal having lowelectrical resistance such as tungsten, titanium, tantalum, andplatinum, and the barrier layer may include a metal nitride such astungsten nitride, titanium nitride, and tantalum nitride.

Thereafter, an insulation pattern 144 may be formed in the first trench130.

In exemplary embodiments of the inventive concept, an insulation spacermay be formed on the sidewall of the first trench 130, and a commonsource line may be formed in the first trench 130 to contact thesubstrate 100.

By performing the above processes, a stacked structure 142 including theinsulation layers 102 and the gate patterns 140 alternately andrepeatedly stacked may be formed on the substrate 100.

Referring again to FIG. 1, an upper insulation layer 150 may be formedon the stacked structure 142 and the insulation pattern 144. A bit linecontact 152 may be formed through the upper insulation layer 150, andmay be electrically connected to the upper conductive pattern 124. Inaddition, bit lines 154 extending in the second direction may be formedon the upper insulation layer 150 and the bit line contacts 152. Thus, abit line structure 156 including the bit line contact 152 and the bitline 154 may be formed.

As described above, the variable resistance layer is formed on the innersidewall of the channel 118; therefore, the vertical semiconductordevice having memory cells including the first and second data storage120 and 116 structures may be manufactured.

The vertical semiconductor device in accordance with exemplaryembodiments of the inventive concept may include two data storage unitsin the one memory cell. However, a structure of the memory cell and ashape of the memory cell may be variously modified.

FIG. 17 is a cross-sectional view illustrating a vertical semiconductordevice in accordance with an exemplary embodiment of the inventiveconcept. FIG. 18 is an enlarged cross-sectional view of a memory cell ofa vertical semiconductor device in accordance with an exemplaryembodiment of the inventive concept. FIG. 19 is a circuit diagram ofmemory cells of a vertical semiconductor device in accordance with anexemplary embodiment of the inventive concept.

Referring to FIGS. 17 to 19, the vertical semiconductor device mayinclude the stacked structure 142 a formed on the substrate 100 and thevertical structures 126 including the channel 118 and passing throughthe stacked structure 142 a.

The stacked structure 142 a may include the insulation layers 102 andthe gate patterns 140 a alternately and repeatedly stacked.

The vertical structure 126 may include the second data storage structure116, the channel 118, the first data storage structure 120 a, thefilling insulation pattern 122, and an upper conductive pattern 124sequentially stacked on the gate pattern 140 a in a direction parallelto the surface of the substrate 100.

The first data storage structure 120 a may face the gate pattern 140 a,and may have an isolated shape. For example, the first data storagestructure 120 a may protrude toward the gate pattern 140 a along thethird direction. The first data storage structures 120 a included in thememory cells of a cell string may be spaced apart from each other in thefirst direction. In addition, the second data storage structure 116included in the memory cells of the cell string may extend in the firstdirection, and the channel 118 may extend in the first direction.

In exemplary embodiments of the inventive concept, a recess (107, referto FIG. 20) may be disposed at an area from the sidewall of the channelhole 106 to the sidewall of gate pattern 140 a. In other words, therecess 107 may be open through the sidewall of the channel hole 106, andthe recesses 107 may be repeatedly arranged to be spaced apart from eachother in the first direction.

The vertical structure 126 may be formed in the channel hole 106 and therecess 107.

In exemplary embodiments of the inventive concept, the second datastorage structure 116 may be conformally formed on the sidewall of thechannel hole 106 and the surface of the recess 107. The channel 118 maybe conformally formed on the surface of the channel hole 106 and in therecess 107. Thus, the channel 118 may be electrically connected to thesubstrate 100.

The first data storage structure 120 a may be formed in the recess 107,and may contact the channel 118. Thus, the first data storage structures120 a may be formed on the channel 118, and the first data storagestructures 120 a may be spaced from each other in the first direction.

In exemplary embodiments of the inventive concept, the gate pattern 140formed on the sidewall of the semiconductor pattern 108 may have thesame as a shape of that as shown in FIG. 1.

Each memory cell included in the cell string may have a circuit diagramas shown in FIG. 19. Referring to FIG. 19, the first data storagestructures (e.g., variable resistance layers) of memory cells may bephysically spaced apart from each other. An electrical operation of thecircuit diagram of FIG. 19 may be substantially the same as anelectrical operation of the circuit diagram as shown in FIG. 3.

Therefore, the vertical semiconductor device may be performed a writeoperation and read operation in substantially the same as manner asdescribed with reference to FIGS. 5 to 12. The vertical semiconductordevice may store data of multi-bits in each of the first and second datastorage structures 120 a and 116 of the one memory cell.

FIGS. 20 to 22 are cross-sectional views illustrating stages of a methodof manufacturing a vertical semiconductor device according to anexemplary embodiment of the inventive concept.

Referring to FIG. 20, the insulation layers 102 and the firstsacrificial layers 104 may be alternately and repeatedly formed on thesubstrate 100 to form the first mold layer. The channel holes 106 may beformed through the first mold layer to expose the surface of thesubstrate 100. In exemplary embodiments of the inventive concept, thesemiconductor pattern 108 may be formed on the bottom surface of thechannel holes 106, and the semiconductor pattern 108 may contact thesubstrate 100.

Thereafter, a portion of the first sacrificial layers 104 exposed by thesidewall of the channel hole 106 may be etched to form the recess 107.

Referring to FIG. 21, the blocking layer 110, the charge storage layer112, and the insulation layer 114 may be sequentially formed on theupper surface of the first mold layer, the sidewall of the channel hole106, the upper surface of the semiconductor pattern 108. The blockinglayer 110, the charge storage layer 112, and the tunnel insulation layer114 formed on the upper surfaces of the first mold layer and thesemiconductor pattern 108 may be anisotropically etched. Thus, theblocking layer 110, the charge storage layer 112, and the tunnelinsulation layer 114 may be sequentially and conformally formed on thesidewall of the channel hole 106 and the surface of the recess 107. Theblocking layer 110, the charge storage layer 112, and the tunnelinsulation layer 114 may serve as the second data storage structure 116.

Referring to FIG. 22, the channel layer may be formed conformally on thetunnel insulation layer 114 and the first mold layer. The variableresistance layer may be formed on the channel layer. The channel layermay not completely fill the recess 107. The variable resistive layer maycompletely fill the recess 107.

A portion of the variable resistive layer may be etched so that thevariable resistive layer may only remain in the recess 107. Thus, avariable resistance pattern may be formed in the recess 107, and aplurality of the variable resistance patterns may be spaced apart fromeach other in the first direction. Each of the variable resistancepatterns may serve as the first data storage structure 120 a.

Thereafter, a filling insulation layer may be formed on first datastorage structure 120 a and the channel layer to fill a remainingportion of the channel hole 106. Thereafter, the filling insulationlayer and the channel layer may be planarized until the upper surface ofthe first mold layer is exposed to form the filling insulation pattern122 and the channel 118.

An upper portion of the filling insulation pattern 122 may be partiallyremoved to form an upper recess exposing an upper sidewall of thechannel 118. An upper conductive pattern 124 may be formed to fill theupper recess. Thus, the vertical structure 126 may be formed in thechannel hole 106.

Subsequently, the processes illustrated with reference to FIGS. 15, 16and 1 may be performed in the same manner. Therefore, the verticalsemiconductor device as shown in FIG. 17 may be manufactured.

FIG. 23 is a cross-sectional view illustrating a vertical semiconductordevice in accordance with an exemplary embodiment of the inventiveconcept. FIG. 24 is an enlarged cross-sectional view of a memory cell ofthe vertical semiconductor device in accordance with an exemplaryembodiment of the inventive concept.

Referring to FIGS. 23 and 24, the vertical semiconductor device mayinclude the stacked structure 142 formed on a substrate 100 and thevertical structures 126 a including the channel 118 and passing throughthe stacked structure 142.

The stacked structure 142 may include the insulation layers 102 and thegate structures 141 alternately and repeatedly stacked. Thus, the gatestructures 141 may be spaced apart from each other in the firstdirection.

The gate structure 141 may include a gate pattern 140 and a second datastorage structure 116 surrounding the surface of the gate pattern 140.The second data storage structure 116 may include the blocking layer110, the charge storage layer 112, and the tunnel insulation layer 114sequentially stacked on the surface of the gate pattern 140.

The vertical structure 126 a may pass through the stacked structure 142,and may have a pillar shape. The vertical structure 126 a may includethe channel 118, the first data storage structure 120 a, the fillinginsulation pattern 122, and the upper conductive pattern 124.

The channel hole 106 (refer to FIG. 20) may extend to the upper surfaceof the substrate 100 through the stacked structure 142. The recess 107(refer to FIG. 20) may be disposed at a portion from the sidewall of thechannel hole 106 to the sidewall of the gate pattern 140. In otherwords, the recess 107 may be open through the sidewall of the channelhole 106, and a plurality of recesses 107 may be arranged in the firstdirection to be spaced apart from each other.

The vertical structure 126 a may be formed in the channel hole 106 andthe recess 107.

The channel 118 may be electrically connected to the substrate 100. Thechannel 118 may be conformally formed on the surfaces of the channelhole 106 and the recess 107, and may have a cylindrical shape.

The variable resistance pattern may be formed in each of the recesses107, and may contact the channel 118. The variable resistance patternmay serve as the first data storage structure 120 a.

The filling insulation pattern 122 may contact the first data storagestructure 120 a and the channel 118, and may fill most of a remainingportion of the channel hole 106.

As described above, the variable resistance patterns in the memory cellsmay be physically spaced apart from each other. Therefore, the verticalsemiconductor device may have a circuit diagram substantially the sameas the circuit diagram as shown in FIG. 19.

Hereinafter, a method of manufacturing the vertical type semiconductordevice is briefly described.

First, processes the same as the processes illustrated with reference toFIG. 20 may be performed. Subsequently, the channel 118 and the variableresistance pattern may be formed in the channel hole 106 and the recess107. In addition, the filling insulation pattern 122 and the upperconductive pattern 124 may be formed in the channel hole 106, so thatthe vertical structure may be formed.

Thereafter, the processes the same as the processes illustrated withreference to FIG. 15 may be performed to form the first trench 130 andthe first gaps 132.

Then, referring to FIG. 23, the tunnel insulation layer 114, the chargestorage layer 112, and the blocking layer 110 may be conformally formedin the first trench 130 and the first gaps 132. The gate electrode layermay be formed on the blocking layer 110 to fill the first gaps 132.Thereafter, the gate electrode layer formed in the first trench 130 maybe selectively removed to form the gate pattern 140.

In exemplary embodiments of the inventive concept, the tunnel insulationlayer 114, the charge storage layer 112, and the blocking layer 110formed in the first trench 130 may be removed.

Thereafter, an insulation pattern 144 may be formed in the first trench130.

Thus, the stacked structure 142 may be formed to include the insulationlayer 102 and the gate structure 141 alternately and repeatedly stacked.

Subsequently, an upper insulation layer 150 and a bit line structure 156are formed on the stacked structure 142. Thus, the verticalsemiconductor device shown in FIG. 23 may be manufactured.

FIG. 25 is a cross-sectional view illustrating a vertical semiconductordevice in accordance with an exemplary embodiment of the inventiveconcept. FIG. 26 is an enlarged cross-sectional view of a memory cell ofa vertical semiconductor device in accordance with an exemplaryembodiment of the inventive concept.

Referring to FIGS. 25 and 26, the vertical semiconductor device mayinclude the stacked structure 142 formed on the substrate 100 and thevertical structure 126 a including a channel 118 and passing through thestacked structure 142.

The stacked structure 142 may include the insulation layers 102 and thegate structures 141 alternately and repeatedly stacked. The stackedstructure 142 may be substantially the same as the stacked structureshown in FIGS. 23 and 24.

A channel hole 106 may extend to the upper surface of the substrate 100through the stacked structure 142.

The vertical structure 126 a may include the channel 118, the first datastorage structure 130, the filling insulation pattern 122, and the upperconductive pattern 124. The vertical structure 126 a may be formed inthe channel hole 106.

The channel 118 may be electrically connected to the substrate 100. Thechannel 118 may have a cylindrical shape in the channel hole 106.

The first data storage structure 120 may be formed on the channel 118.Thus, the first data storage structure 120 may have a cylindrical shape.The first data storage structure 120 may be the variable resistancelayer.

The filling insulation pattern 122 may be formed on the first datastorage structure 120 to fill most of a remaining portion of the channelhole 106.

As described above, the first data storage structures 120 of the memorycells in a cell string may be connected to each other in the firstdirection. Therefore, the vertical semiconductor device may have acircuit diagram substantially the same as the circuit diagram as shownin FIG. 3.

Hereinafter, a method of manufacturing the vertical type semiconductordevice is briefly described.

First, processes the same as the processes illustrated with reference toFIG. 13 may be performed to form the channel hole 106 exposing thesurface of the substrate 100 through the first mold layer. After formingthe channel hole 106, the channel 118 and the first data storagestructure 120 may be conformally formed on the surface of the channelhole 106. The filling insulation pattern 122 and the upper conductivepattern 124 may be formed in the channel hole, so that the verticalstructure 126 a may be formed.

Thereafter, the process as described with reference to FIG. 15 may beperformed to form the first trench 130 and the first gaps 132.

Referring to FIG. 25, the tunnel insulation layer 114, the chargestorage layer 112, and the blocking layer 110 may be conformally formedin the first trench 130 and the first gaps 132. The gate electrode layermay be formed on the blocking layer 110 to fill the first gaps 132.Thereafter, the gate electrode layer formed in the first trench 130 maybe selectively removed to form the gate pattern 140. In exemplaryembodiments of the inventive concept, the tunnel insulation layer 114,the charge storage layer 112, and the blocking layer 110 formed in thefirst trench 130 may be removed.

Thereafter, the insulation pattern 144 may be formed in the first trench130.

Thus, the stacked structure 142 may be formed to include the insulationlayer 102 and the gate structure 141 alternately and repeatedly stacked.

Subsequently, the upper insulation layer 150 and the bit line structure156 may be formed on the stacked structure 142. Thus, the verticalsemiconductor device shown in FIG. 25 may be manufactured.

FIG. 27 is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept. FIG.28 is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept.

Each of FIGS. 27 and 28 may be planar semiconductor device.

Referring to FIG. 27, the semiconductor device may include an insulationlayer 220 on a substrate to cover an upper surface of the substrate 100.

A first data storage structure 222 may be formed on the insulation layer220. The first data storage structure 222 may include a resistiveswitching material or a phase change material.

A channel 224 and a second data storage structure 232 may be formed onthe first data storage structure 222. The second data storage structure232 may include a blocking layer 226, a charge storage layer 228, and atunnel insulation layer 230 sequentially stacked on the channel 224.

A gate pattern 240 may be formed on the second data storage structure232.

In exemplary embodiments of the inventive concept, the first datastorage structure 222 may extend in the third direction. In exemplaryembodiments of the inventive concept, the channel 224 may extend in thethird direction. In exemplary embodiments of the inventive concept, thechannel 224 may cover the insulation layer 220 and the first datastorage structure 222.

In exemplary embodiments of the inventive concept, the second datastorage structure 232 may extend in the third direction.

In exemplary embodiments of the inventive concept, as shown in FIG. 28,the second data storage structure 232 a may have an isolated shape. Inother words, the second data storage structure 232 a may include theblocking pattern 226 a, the charge storage pattern 228 a, and the tunnelinsulation pattern 230 a sequentially stacked on the channel 224.

The gate pattern 240 may extend in the second direction. A plurality ofthe gate patterns 240 may be spaced apart in the third direction.

A stack of the memory cells of the semiconductor device shown in FIG. 27may be similar to the stack of the memory cells of the verticalsemiconductor device illustrated with reference to FIGS. 1 and 2.

FIG. 29 is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept. FIG.30 is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept.

Each of FIGS. 29 and 30 may be may be planar semiconductor device.

Referring to FIG. 29, the semiconductor device may include theinsulation layer 220 on the substrate 100 to cover the substrate 100.The first data storage structure 222 a, the channel 224 and the seconddata storage structure 232 may be formed on the insulation layer 220. Inaddition, the gate pattern 240 may formed on the second data storagestructure 232.

In exemplary embodiments of the inventive concept, the first datastorage structure 222 a may have an isolated pattern shape.

In exemplary embodiments of the inventive concept, the first datastorage structure 222 a may be formed in a recess included in theinsulation layer 220. Therefore, an upper surface of the first datastorage structure 222 a and an upper surface of the insulation layer 220may be coplanar with each other. In exemplary embodiments of theinventive concept, the first data storage structure 222 a may be formedon a planar upper surface of the insulation layer 220. In this case, theupper surface of the first data storage structure 222 a may protrudefrom the upper surface of the insulation layer 220.

In exemplary embodiments of the inventive concept, the channel 224 mayextend in the third direction. In exemplary embodiments of the inventiveconcept, the channel 224 may cover the insulation layer 220 and thefirst data storage structure 222 a.

In exemplary embodiments of the inventive concept, the second datastorage structure 232 may extend in the third direction. In exemplaryembodiments of the inventive concept, as shown in FIG. 30, the seconddata storage structure 232 a may have an isolated shape. In other words,the second data storage structure 232 a may include the blocking pattern226 a, the charge storage pattern 228 a, and the tunnel insulationpattern 230 a sequentially stacked on the channel 224.

The gate pattern 240 may extend in the second direction. The pluralityof the gate patterns 240 may be spaced apart in the third direction.

In the cases of the planar semiconductor devices, data may be stored inthe each of first and second data storage structures of the memory cell,and stored data may be separately read in the same manner as thevertical semiconductor device.

Each of the semiconductor devices shown in FIGS. 27 to 30 may perform awrite operation and read operation in substantially the same as mannerdescribed with reference to FIGS. 4 to 12.

The semiconductor device according to exemplary embodiments of theinventive concept may include two data storage structures in one memorycell, so that the number of stored data in the one memory cell may beincreased. In addition, the number of data states required for thenumber of stored data in the one memory cell may be reduced.Furthermore, in the semiconductor device, data stored in each of thefirst and second data storage structures in the one memory cell may beseparately read.

While the inventive concept has been shown and described with referenceto exemplary embodiments thereof, it will be apparent to those ofordinary skill in the art that various modifications in form and detailsmay be made thereto without departing from the spirit and scope of theinventive concept as set forth by the following claims.

1. A vertical semiconductor device, comprising: a channel on asubstrate, the channel extending in a first direction substantiallyperpendicular to an upper surface of the substrate; a first data storagestructure contacting a first sidewall of the channel; a second datastorage structure on a second sidewall of the channel; and gate patternson a surface of the second data storage structure, wherein the gatepatterns are spaced apart from each other in the first direction, andthe gate patterns extend in a second direction substantially parallel tothe upper surface of the substrate.
 2. The vertical semiconductor deviceof claim 1, wherein the first data storage structure includes a variableresistance material.
 3. The vertical semiconductor device of claim 1,wherein the first data storage structure includes STO (SrTiO3), BTO(BaTiO3), PCMO (Pr1-XCaXMnO3), zirconium oxide, hafnium oxide, hafniumaluminum oxide, hafnium silicon oxide, aluminum oxide, titanium oxide ortantalum oxide.
 4. The vertical semiconductor device of claim 1, whereinthe first data storage structure includes a GeSe material or a phasechange material including germanium (Ge), antimony (Sb), or tellurium(Te).
 5. The vertical semiconductor device of claim 1, wherein thesecond data storage structure includes a tunnel insulation layer, acharge storage layer, and a blocking layer.
 6. The verticalsemiconductor device of claim 5, wherein the charge storage layer is afloating layer including silicon.
 7. The vertical semiconductor deviceof claim 5, wherein the charge storage layer is a charge trap layerincluding a silicon nitride or a metal nitride.
 8. The verticalsemiconductor device of claim 1, wherein the first data storagestructure covers the first sidewall of the channel.
 9. The verticalsemiconductor device of claim 1, wherein a plurality of first datastorage structures are spaced apart from each other in the firstdirection, and the first data storage structures face each other in ahorizontal direction with respect to the upper surface of the substrate.10. The vertical semiconductor device of claim 1, wherein data arestored in the first data storage structure and the second data storagestructure, respectively, by electric fields in different directions. 11.The vertical semiconductor device of claim 1, wherein first data isstored in the first data storage structure by electric fields in adirection substantially parallel to the first sidewall of the channel,and second data is stored in the second data storage structure byelectric fields in a direction substantially perpendicular to the firstsidewall of the channel.
 12. The vertical semiconductor device of claim1, wherein the second data storage structure contacts a portion of thesurface of the gate patterns.
 13. The vertical semiconductor device ofclaim 12, wherein the second data storage structure surrounds thesurface of the gate patterns.
 14. A vertical semiconductor device,comprising: gate patterns stacked on a substrate, wherein the gatepatterns are spaced apart from each other in a first directionsubstantially perpendicular to an upper surface of the substrate, andthe gate patterns extend in a second direction substantially parallel tothe upper surface of the substrate; a channel passing through the gatepatterns, wherein the channel is electrically connected to thesubstrate, and the channel has a cylindrical shape; a first data storagestructure contacting a first sidewall of the channel; and a second datastorage structure on a second sidewall of the channel opposite the firstsidewall, wherein the second data storage structure contacts thechannel.
 15. The vertical semiconductor device of claim 14, wherein thefirst data storage structure includes a variable resistance material.16. The vertical semiconductor device of claim 14, wherein the seconddata storage structure includes a tunnel insulation layer, a chargestorage layer, and a blocking layer.
 17. The vertical semiconductordevice of claim 14, wherein first data is stored in the first datastorage structure by electric fields in a direction substantiallyparallel to the first sidewall of the channel, and second data is storedin the second data storage structure by electric fields in a directionsubstantially perpendicular to the first sidewall of the channel. 18-32.(canceled)
 33. A vertical semiconductor device, comprising: a first gatepattern and a second gate pattern arranged in a vertical direction on asubstrate, wherein an insulation layer is disposed between the firstgate pattern and the second gate pattern; a channel layer disposed onthe substrate; a first data storage element disposed on a first side ofthe channel layer; and a second data storage element disposed on asecond side of the channel layer, wherein the second data storageelement is disposed between the second side of the channel layer and thefirst gate pattern.
 34. The vertical semiconductor device of claim 33,wherein the channel layer directly contacts the first data storageelement and the second data storage element.
 35. The verticalsemiconductor device of claim 33, wherein the first data storage elementand the second data storage element include different materials fromeach other.